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10-fz12NMA040SH-M267F/ 10-pz12NMA040SH-M267Fy datasheet flowmnpc 0 1200v/40a neutral point clamped inverter reactive power capability clip-in pcb mounting low inductance layout solar inverter ups 10-fz12NMA040SH-M267F 10-pz12NMA040SH-M267Fy tj=25c, unless otherwise specified parameter symbol value unit half bridge igbt t h =80c 39 t c =80 c 51 t h =80 c 107 t c = 8 0c 162 t sc t j 15 0c 10 s v c c v ge =15v 800 v neutral point fwd t h =80c 21 t c =80 c 31 i fsm 30 0 a i 2 t 370 a 2 s t h =8 0c 35 t c =8 0 c 54 a t vj max = 150c tur n off safe operating area (rbsoa) i cmax t j =t j max t p limited by t j max t p =8,3ms , sin 180 t c =25c t j =t j max 175 2 0 a 1200 t j =t j max 600 1 7 5 60 v ce max = 1200v 80 su r ge forward current v a a w c repetitive peak collector current i cpulse i2t-value dc co llector current v ce i c i frm t j max rep e titive peak forward current maximum junction temperature v rrm v ge t j max features maximum ratings flow0 12mm housing target applications schematic types condition v w a p tot dc forward current i f p tot maximum junction temperature coll ector-emitter break down voltage power dissipation per igbt short circuit ratings t j =t j max t j =25c 120 t p l imited by t j max c v pea k repetitive reverse voltage gate-emitter peak voltage power dissipation per diode copyright vincotech 1 revision: 6
10-fz12NMA040SH-M267F/ 10-pz12NMA040SH-M267Fy datasheet tj=25c, unless otherwise specified parameter symbol value unit maximum ratings condition neutral point igbt t h =80c 31 t c =80 c 38 t h =80 c 57 t c =8 0 c 86 t sc t j 150c 6 s v cc v g e =15v 360 v half bridge fwd t h =80c 13 t c =80 c 18 i fsm 65 a i 2 t 2 1 a 2 s t h =80 c 42 t c =8 0 c 64 thermal properties insulation properties v is t=2s dc vo ltage 4000 v min 12,7 mm min 12,7 mm surge forward current i2t-value t p =10ms , sin 180 t j =150c tur n off safe operating area (rbsoa) i cmax v ce max = 600v 60 a t vj max = 150c 175 t p l imited by t j max t j =t j max sho r t circuit ratings dc collector current power dissipation per igbt maximum junction temperature v a v c w a repetitive peak collector current gate-emitter peak voltage v ce i cpuls collector-emitter break down voltage i c v a t j =25c a t j =t j max 120 0 d c forward current i f t j =t j max p tot v rrm v ge t j max -40 +(tjmax - 25) c storage temperature t stg -40+125 c c m a ximum junction temperature t j max 175 w pe ak repetitive reverse voltage 45 power dissipation per diode p tot t j =t j max repe titive peak forward current i frm tp limited by tj max 600 9 0 20 clearance insulation voltage creepage distance t op operation temperature under switching condition copyright vincotech 2 revision: 6
10-fz12NMA040SH-M267F/ 10-pz12NMA040SH-M267Fy datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max tj=25c 5,2 5,6 6,4 tj=150c tj=25c 1,7 1,96 2,4 tj=150c 2,29 tj=25c 0,005 tj=150c tj=25c 120 tj=150c tj=25c 70 tj=150c 72 tj=25c 13 tj=150c 15 tj=25c 166 tj=150c 217 tj=25c 45 tj=150c 79 tj=25c 0,31 tj=150c 0,52 tj=25c 0,67 tj=150c 1,16 thermal resistance chip to heatsink per chip r thjh thermal grease thic kness 50um = 1 w/mk 0,89 k/w tj=25c 2,28 2,71 tj=150c 1,74 tj=25c 100 tj=150c tj=25c 32 tj=150c 41 tj=25c 18 tj=150c 40 tj=25c 0,32 tj=150c 0,92 di(rec)max tj=25c 8818 /dt tj=150c 3866 tj=25c 0,03 tj=150c 0,12 thermal resistance chip to heatsink per chip r thjh thermal grease thic kness 50um = 1 w/mk 1,98 k/w 0,0015 v 0 960 1200 25 350 40 28 i ces v ce =v ge q rr t rr t d(off) c rss rgoff=8 rgo n =8 t f erec i rrm q gate f=1mhz c ies e on e off c oss reverse leakage current reve rse recovered charge peak reverse recovery current reverse transfer capacitance diode forward voltage i r gate charge neutral point fwd v f fall time turn -on delay time gate-emitter leakage current t r v ge(th) v ce(sat) input capacitance rise time turn-on energy loss per pulse turn-off delay time value con d itions characteristic values 135 230 0 r everse recovery time reverse recovered energy peak rate of fall of recovery current integrated gate resistor half bridge igbt gate emitter threshold voltage col l ector-emitter cut-off current incl. diode output capacitance turn-off energy loss per pulse collector-emitter saturation voltage 15 30 tj=25c 600 28 15 350 15 15 40 0 t d(on) r gint i ges c non e 1 60 tj=25c rgon=8 20 0 203 a ns nc v pf ma mws v mws na ns a a/s copyright vincotech 3 revision: 6
10-fz12NMA040SH-M267F/ 10-pz12NMA040SH-M267Fy datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max value cond itions characteristic values tj=25c 5,0 5,8 6,5 tj=150c tj=25c 1,1 1,52 1,9 tj=150c 1,70 tj=25c 0,0016 tj=150c tj=25c 300 tj=150c tj=25c 105 tj=150c 105 tj=25c 11 tj=150c 16 tj=25c 164 tj=150c 187 tj=25c 74 tj=150c 91 tj=25c 0,49 tj=150c 0,66 tj=25c 0,76 tj=150c 0,98 thermal resistance chip to heatsink per chip r thjh thermal grease thic kness 50um = 1 w/mk 1,68 k/w tj=25c 2,28 2,71 tj=150c 2,39 tj=25c 60 tj=150c tj=25c 41 tj=150c 44 tj=25c 44 tj=150c 110 tj=25c 1,47 tj=150c 2,73 di(rec)max tj=25c 5094 /dt tj=150c 3534 tj=25c 0,35 tj=150c 0,71 thermal resistance chip to heatsink per chip r thjh thermal grease thic kness 50um = 1 w/mk 2,27 k/w tol. 3% tol. 3% power dissipation constant b (25/100) b (25/50) b-value b-va lue vincotech ntc reference mw/k mw 200 2 tj=100c -5 tj=25c tj=25c 30 a ns a mws 28 c v 5 a/s mws tj=25c neutral point igbt turn-on delay time tur n -off delay time collector-emitter saturation voltage collector-emitter cut-off incl diode t d(off) t r t d(on) gate-emitter leakage current v ce(sat) rise time r gint i ges v ge(th) ns tj= 25c pf nc 30 % 28 15 350 1200 p ? r/r power dissipation deviation of r100 r100=1486 half bridge fwd diode forward voltage reve rse leakage current i r rgon=8 rated resistance the r mistor r v f peak reverse recovery current i rrm q rr e rec reverse recovery energy t rr ma na v v re v erse recovery time peak rate of fall of recovery current reverse recovered charge rgoff=8 fall time gate emitter threshold voltage integrated gate resistor i ces 15 480 0 20 15 15 50 3996 22000 tj=25c tj=25c tj=25c b k none 165 108 1630 3950 k turn-off energy loss per pulse c rss output capacitance inp u t capacitance e off reverse transfer capacitance gate charge q gate t f rgon=8 f=1m hz e on c ies c oss turn-on energy loss per pulse 25 350 6 00 0 15 0 v ce =v ge 0,002 copyright vincotech 4 revision: 6
10-fz12NMA040SH-M267F/ 10-pz12NMA040SH-M267Fy datasheet figure 1 igbt figure 2 igbt typical output characteristics i c = f(v ce ) i c = f(v ce ) at at t p = 250 s t p = 250 s t j = 25 c t j = 125 c v ge from 7 v to 17 v in steps of 1 v v ge from 7 v to 17 v in steps of 1 v figure 3 igbt figur e 4 fwd typical transfer characteristics typica l diode forward current as i c = f(v ge ) a func tion of forward voltage i f = f(v f ) at at t p = 250 s t p = 250 s v ce = 10 v ha lf bridge igbt and neutral point fwd half bridge typical output characteristics 0 30 60 90 120 150 180 0 1 2 3 4 5 v ce (v) i c (a) 0 10 20 30 40 50 0 2 4 6 8 10 12 v ge (v) i c (a) t j = 25c t j = t jmax -25c 0 25 50 75 100 125 0 1 2 3 4 v f (v) i f (a) t j = 25c t j = t jmax -25c 0 30 60 90 120 150 180 0 1 2 3 4 5 v ce (v) i c (a) copyright vincotech 5 revision: 6
10-fz12NMA040SH-M267F/ 10-pz12NMA040SH-M267Fy datasheet figure 5 igbt figure 6 igbt typical switching energy losses typica l switching energy losses as a function of collector current as a function of gate resistor e = f(i c ) e = f(r g ) with an inductive load at with an inductive load at t j = 25/ 1 25 c t j = 25/1 25 c v ce = 350 v v c e = 350 v v g e = 15 v v g e = 15 v r g on = 8 i c = 28 a r go ff = 8 figure 7 fwd figure 8 fwd typical reverse recovery energy loss typica l reverse recovery energy loss as a function of collector current as a function of gate resistor e rec = f(i c ) e rec = f(r g ) with an inductive load at with an inductive load at t j = 25/ 1 25 c t j = 25/1 25 c v ce = 350 v v c e = 350 v v g e = 15 v v g e = 15 v r g on = 8 i c = 28 a ha lf bridge igbt and neutral point fwd half bridge e on high t e off high t e on low t e off low t 0,0 0,5 1, 0 1,5 2,0 0 15 30 45 60 i c (a) e (mws) e off high t e on high t e on low t e off low t 0,0 0,5 1,0 1,5 2,0 0 10 20 30 40 r g ( ) e (mws) e rec high t e rec low t 0,00 0,05 0 ,10 0,15 0,20 0 15 30 45 60 i c (a) e (mws) e rec high t e rec low t 0 0,03 0 ,06 0,09 0,12 0,15 0 10 20 30 40 r g ( ) e (mws) copyright vincotech 6 revision: 6
10-fz12NMA040SH-M267F/ 10-pz12NMA040SH-M267Fy datasheet figure 9 igbt figure 10 igbt typical switching times as a typica l switching times as a function of collector current function of gate resistor t = f(i c ) t = f(r g ) with an inductive load at with an inductive load at t j = 125 c t j = 125 c v ce = 350 v v c e = 350 v v g e = 15 v v g e = 15 v r g on = 8 i c = 28 a r go ff = 8 figure 11 fwd figure 12 fwd typical reverse recovery time as a typica l reverse recovery time as a function of collector current function of igbt turn on gate resistor t rr = f(ic) t rr = f(r gon ) at at t j = 25/ 1 25 c t j = 25/1 25 c v ce = 350 v v r = 3 50 v v g e = 15 v i f = 2 8 a r go n = 8 v ge = 15 v h alf bridge half bridge igbt an d neutral point fwd t doff t f t don t r 0,00 0,01 0 ,10 1,00 0 15 30 45 60 i c (a) t (ms) t rr high t t rr low t 0,00 0,02 0 ,04 0,06 0,08 0,10 0 10 20 30 40 r gon ( ) t rr (ms) t doff t f t don t r 0,00 0,0 1 0 ,10 1,00 0 10 20 30 40 r g ( ) t (ms) t rr high t t rr low t 0,00 0,01 0 ,02 0,03 0,04 0,05 0 15 30 45 60 i c (a) t rr (ms) copyright vincotech 7 revision: 6
10-fz12NMA040SH-M267F/ 10-pz12NMA040SH-M267Fy datasheet figure 13 fwd figure 14 fwd typical reverse recovery charge as a typica l reverse recovery charge as a function of collector current function of igbt turn on gate resistor q rr = f(i c ) q rr = f(r gon ) at at at t j = 25/ 1 25 c t j = 25/1 25 c v ce = 350 v v r = 3 50 v v g e = 15 v i f = 2 8 a r go n = 8 v ge = 15 v fi gure 15 fwd figure 16 fwd typical reverse recovery current as a typica l reverse recovery current as a function of collector current function of igbt turn on gate resistor i rrm = f(i c ) i rrm = f(r gon ) at at t j = 25/ 1 25 c t j = 25/1 25 c v ce = 350 v v r = 3 50 v v g e = 15 v i f = 2 8 a r go n = 8 v ge = 15 v h alf bridge half bridge igbt an d neutral point fwd i rrm high t i rrm low t 0 15 30 45 6 0 0 10 20 30 40 r gon ( ) i rrm (a) q rr high t q rr low t 0,0 0,3 0,6 0,9 1,2 0 10 20 30 40 r gon ( w ) q rr (mc) i rrm high t i rrm low t 0 15 30 45 6 0 0 15 30 45 60 i c (a) i rrm (a) q rr high t q rr low t 0,0 0,3 0 , 6 0,9 1,2 1,5 0 15 30 45 60 i c (a) q rr (mc) copyright vincotech 8 revision: 6
10-fz12NMA040SH-M267F/ 10-pz12NMA040SH-M267Fy datasheet figure 17 fwd figure 18 fwd typical rate of fall of forward typica l rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of igbt turn on gate resistor di 0 /dt,di rec /dt = f(ic) di 0 /dt ,di rec /dt = f(r gon ) at at t j = 25/ 1 25 c t j = 25/1 25 c v ce = 350 v v r = 3 50 v v g e = 15 v i f = 2 8 a r go n = 8 v ge = 15 v fi gure 19 igbt figur e 20 fwd igbt transient thermal impedance fwd t ransient thermal impedance as a function of pulse width as a function of pulse width z thjh = f(t p ) z thjh = f(t p ) at at d = t p / t d = t p / t r thjh = 0,89 k/w r thjh = 1,98 k/w igbt thermal model values fwd thermal model values r (c/w) tau (s) r (c/w) tau (s) 0,09 1,1e+00 0,07 5,6e+00 0,17 2,9e-01 0,17 1,2e+00 0,47 9,1e-02 0,52 2,2e-01 0,12 1,4e-02 0,75 7,6e-02 0,04 9,2e-04 0,25 1,5e-02 0,13 2,8e-03 half bridge half bridge igbt an d neutral point fwd t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 di 0 /dt t di rec /dt t 0 300 0 6 000 9000 12000 15000 0 10 20 30 40 r gon ( ) di rec / dt (a/ms) di rec /dt t di o /dt t 0 300 0 6 000 9000 12000 0 15 30 45 60 i c (a) di rec / dt (a/ms) copyright vincotech 9 revision: 6
10-fz12NMA040SH-M267F/ 10-pz12NMA040SH-M267Fy datasheet figure 21 igbt figure 22 igbt power dissipation as a collec tor current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i c = f(t h ) at at t j = 1 75 c t j = 175 c v ge = 15 v figur e 23 fwd figure 24 fwd power dissipation as a forwar d current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i f = f(t h ) at at t j = 1 50 c t j = 150 c half bridge igbt and neutral point fwd half bridge 0 50 100 150 200 0 50 100 150 200 t h ( o c) p tot (w) 0 15 30 45 60 75 0 50 100 150 200 t h ( o c) i c (a) 0 20 40 60 80 0 50 100 150 200 t h ( o c) p tot (w) 0 10 20 30 40 50 0 50 100 150 200 t h ( o c) i f (a) copyright vincotech 10 revision: 6
10-fz12NMA040SH-M267F/ 10-pz12NMA040SH-M267Fy datasheet figure 25 igbt figure 26 igbt safe operating area as a function gate voltage vs gate charge of collector-emitter voltage i c = f(v ce ) v ge = f(q g ) at at d = single pulse i c = 40 a th = 80 oc v ge = 15 v t j = t jmax oc figure 27 igbt re verse bias safe operating area i c = f(v ce ) at t j = t j max -25 oc dc link minus =dc link plus switching mode : 3 level switching half bridge half bridge igbt an d neutral point fwd v ce (v) i c (a) 10 4 10 1 10 0 10 2 10 3 10 1 10 2 10 0 100us 1ms 10ms 100ms dc 10 0 10 3 0 5 10 15 20 0 50 100 150 200 250 300 q g (nc) v ge (v) 240v 960v 0 20 40 60 80 100 0 200 400 600 800 1000 1200 1400 v ce (v) i c (a) i c max v ce max i c module i c chip copyright vincotech 11 revision: 6
10-fz12NMA040SH-M267F/ 10-pz12NMA040SH-M267Fy datasheet figure 1 igbt figure 2 igbt typical output characteristics typica l output characteristics i c = f(v ce ) i c = f(v ce ) at at t p = 250 s t p = 250 s t j = 25 c t j = 125 c v ge from 7 v to 17 v in steps of 1 v v ge from 7 v to 17 v in steps of 1 v figure 3 igbt figur e 4 fwd typical transfer characteristics typica l diode forward current as i c = f(v ge ) a func tion of forward voltage i f = f(v f ) at at t p = 250 s t p = 250 s v ce = 10 v ne utral point neutral point igbt an d half bridge fwd 0 25 50 75 100 125 150 0 1 2 3 4 5 v ce (v) i c (a) 0 15 30 45 60 75 0 2 4 6 8 10 12 v ge (v) i c (a) t j = 25c t j = t jmax -25c 0 20 40 60 80 0 1 2 3 4 5 v f (v) i f (a) t j = 25c t j = t jmax -25c 0 25 50 75 100 125 150 0 1 2 3 4 5 v ce (v) i c (a) copyright vincotech 12 revision: 6
10-fz12NMA040SH-M267F/ 10-pz12NMA040SH-M267Fy datasheet figure 5 igbt figure 6 igbt typical switching energy losses typica l switching energy losses as a function of collector current as a function of gate resistor e = f(i c ) e = f(r g ) with an inductive load at with an inductive load at t j = 25/ 1 25 c t j = 25/1 25 c v ce = 350 v v c e = 350 v v g e = 15 v v g e = 15 v r g on = 16 i c = 28 a r go ff = 16 figure 7 fwd figure 8 fwd typical reverse recovery energy loss typica l reverse recovery energy loss as a function of collector current as a function of gate resistor e rec = f(i c ) e rec = f(r g ) with an inductive load at with an inductive load at t j = 25/ 1 25 c t j = 25/1 25 c v ce = 350 v v c e = 350 v v g e = 15 v v g e = 15 v r g on = 16 i c = 28 a ne utral point neutral point igbt an d half bridge fwd e rec high t e rec low t 0,0 0,2 0 , 4 0,6 0,8 1,0 0 15 30 45 60 i c (a) e (mws) e rec high t e rec low t 0,0 0,2 0, 4 0,6 0,8 1,0 0 20 40 60 80 r g ( w ww w ) e (mws) e off high t e on high t e on low t e off low t 0,0 0,5 1 , 0 1,5 2,0 0 15 30 45 60 i c (a) e (mws) e off high t e on high t e on low t e off low t 0,0 0,4 0, 8 1,2 1,6 2,0 0 20 40 60 80 r g ( w ww w ) e (mws) copyright vincotech 13 revision: 6
10-fz12NMA040SH-M267F/ 10-pz12NMA040SH-M267Fy datasheet figure 9 igbt figure 10 igbt typical switching times as a typica l switching times as a function of collector current function of gate resistor t = f(i c ) t = f(r g ) with an inductive load at with an inductive load at t j = 125 c t j = 125 c v ce = 350 v v c e = 350 v v g e = 15 v v g e = 15 v r g on = 16 i c = 28 a r go ff = 16 figure 11 fwd figure 12 fwd typical reverse recovery time as a typica l reverse recovery time as a function of collector current function of igbt turn on gate resistor t rr = f(ic) t rr = f(r gon ) at at t j = 25/ 1 25 c t j = 25/1 25 c v ce = 350 v v r = 3 50 v v g e = 15 v i f = 2 8 a r go n = 16 v ge = 1 5 v n eutral point neutral point igbt an d half bridge fwd t doff t f t don t r 0,00 0,01 0 ,10 1,00 0 15 30 45 60 i c (a) t ( m s) t doff t f t don t r 0,00 0,01 0 ,10 1,00 0 20 40 60 80 r g ( w ww w ) t ( m s) t rr high t t rr low t 0,00 0,05 0 ,10 0,15 0,20 0,25 0,30 0 15 30 45 60 75 r gon ( ) t rr (ms) t rr high t t rr low t 0,00 0,03 0 ,06 0,09 0,12 0 15 30 45 60 i c (a) t rr (ms) copyright vincotech 14 revision: 6
10-fz12NMA040SH-M267F/ 10-pz12NMA040SH-M267Fy datasheet figure 13 fwd figure 14 fwd typical reverse recovery charge as a typica l reverse recovery charge as a function of collector current function of igbt turn on gate resistor q rr = f(i c ) q rr = f(r gon ) at at at t j = 25/ 1 25 c t j = 25/1 25 c v ce = 350 v v r = 3 50 v v g e = 15 v i f = 2 8 a r go n = 16 v ge = 1 5 v fi gure 15 fwd figure 16 fwd typical reverse recovery current as a typica l reverse recovery current as a function of collector current function of igbt turn on gate resistor i rrm = f(i c ) i rrm = f(r gon ) at at t j = 25/ 1 25 c t j = 25/1 25 c v ce = 350 v v r = 3 50 v v g e = 15 v i f = 2 8 a r go n = 16 v ge = 1 5 v neutral point igbt and half bridge fwd neutral point i rrm high t i rrm low t 0 20 40 60 8 0 100 0 15 30 45 60 75 r gon ( ) i rrm (a) q rr high t q rr low t 0 1 2 3 4 0 15 30 45 60 75 r gon ( w ) q rr (mc) i rrm high t i rrm low t 0 15 30 45 6 0 0 15 30 45 60 i c (a) i rrm (a) q rr high t q rr low t 0 1 2 3 4 0 15 3 0 4 5 60 i c (a) q rr (mc) copyright vincotech 15 revision: 6
10-fz12NMA040SH-M267F/ 10-pz12NMA040SH-M267Fy datasheet figure 17 fwd figure 18 fwd typical rate of fall of forward typica l rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of igbt turn on gate resistor di 0 /dt,di rec /dt = f(ic) di 0 /dt ,di rec /dt = f(r gon ) at at t j = 25/ 1 25 c t j = 25/1 25 c v ce = 350 v v r = 3 50 v v g e = 15 v i f = 2 8 a r go n = 16 v ge = 1 5 v fi gure 19 igbt figur e 20 fwd igbt transient thermal impedance fwd t ransient thermal impedance as a function of pulse width as a function of pulse width z thjh = f(t p ) z thjh = f(t p ) at at d = tp / t d = tp / t r thjh = 1,6 8 k/w r thjh = 2,27 k/w igbt thermal model values fwd thermal model values r (c/w) tau (s) r (c/w) tau (s) 0,07 4,8e+00 0,04 9,1e+00 0,17 1,0e+00 0,13 9,0e-01 0,47 1,9e-01 0,53 1,5e-01 0,56 6,8e-02 0,66 5,1e-02 0,32 1,2e-02 0,42 1,1e-02 0,09 2,5e-03 0,29 2,5e-03 0,19 5,8e-04 neutral point neutral point igbt an d half bridge fwd t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 di 0 /dt t di rec /dt t 0 300 0 6 000 9000 12000 15000 0 15 30 45 60 75 r gon ( ) di rec / dt (a/ms) di 0 /dt t di rec /dt t 0 100 0 2 000 3000 4000 5000 6000 0 15 30 45 60 i c (a) di rec / dt (a/ms) copyright vincotech 16 revision: 6
10-fz12NMA040SH-M267F/ 10-pz12NMA040SH-M267Fy datasheet figure 21 igbt figure 22 igbt power dissipation as a collec tor current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i c = f(t h ) at at t j = 1 75 o c t j = 175 o c v ge = 15 v figur e 23 fwd figure 24 fwd power dissipation as a forwar d current as a function of heatsink temperature function of heatsink temperature p tot = f(t h ) i f = f(t h ) at at t j = 1 75 o c t j = 175 o c neutral point neutral point igbt an d half bridge fwd 0 25 50 75 100 125 0 50 100 150 200 t h ( o c) p tot (w) 0 10 20 30 40 50 0 50 100 150 200 t h ( o c) i c (a) 0 20 40 60 80 0 50 100 150 200 th ( o c) p tot (w) 0 5 10 15 20 25 0 50 100 150 200 th ( o c) i f (a) copyright vincotech 17 revision: 6
10-fz12NMA040SH-M267F/ 10-pz12NMA040SH-M267Fy datasheet figure 25 igbt figure 26 igbt safe operating area as a function gate voltage vs gate charge of collector-emitter voltage i c = f(v ce ) v ge = f(q g ) at at d = single pulse i c = 30 a th = 80 oc v ge = 15 v t j = t jmax oc figure 27 igbt re verse bias safe operating area i c = f(v ce ) at t j = t j max -25 oc dc link minus =dc link plus switching mode : 3 level switching neutral point neutral point igbt and half bridge fwd v ce (v) i c (a) 10 3 10 0 10 -1 10 1 10 2 10 1 10 2 100us 1ms 10ms 100ms dc 10 0 10 3 0 2,5 5 7,5 10 12,5 15 17,5 20 0 15 30 45 60 75 90 105 120 135 150 165 180 195 q g (nc) v ge (v) 120v 480v 0 10 20 30 40 50 60 70 80 0 100 200 300 400 500 600 700 v ce (v) i c (a) i c max v ce max i c module i c chip copyright vincotech 18 revision: 6
10-fz12NMA040SH-M267F/ 10-pz12NMA040SH-M267Fy datasheet figure 1 thermistor typical ntc characteristic as a function of temperature r t = f(t) thermistor ntc-typical temperature characteristic 0 400 0 8 000 12000 16000 20000 24000 25 50 75 100 125 t (c) r/ copyright vincotech 19 revision: 6
10-fz12NMA040SH-M267F/ 10-pz12NMA040SH-M267Fy datasheet t j 125 c r gon 16 r goff 16 figure 1 neutr al point igbt figure 2 neutral point igbt turn-off switching waveforms & definition of t doff , t eoff turn-on switching waveforms & definition of t don , t eon (t eoff = integrating time for e off ) (t eon = integrating time for e on ) v ge (0%) = -15 v v g e (0%) = -15 v v g e (100%) = 15 v v ge (100%) = 15 v v c ( 100%) = 350 v v c (100%) = 350 v i c (100%) = 28 a i c ( 100%) = 28 a t do ff = 0,19 s t d on = 0,11 s t e off = 0,39 s t e on = 0,26 s fi gure 3 neutr al point igbt figure 4 neutral point igbt turn-off switching waveforms & definition of t f turn-on switching waveforms & definition of t r v c (100%) = 350 v v c (100%) = 350 v i c (100%) = 28 a i c ( 100%) = 28 a t f = 0 ,09 s t r = 0,02 s s witching definitions neutral point igbt general conditions = = = i c 1% v ce 90% v ge 90% -25 0 25 50 75 1 00 125 -0,2 0 0,2 0,4 0,6 time (us) % t doff t eoff v ce i c v ge i c 10% v ge 10% t don v ce 3% -50 0 50 100 1 50 200 250 300 2,9 3 3,1 3,2 3,3 time(us) % i c v ce t eon v ge fitted i c10% i c 90% i c 60% i c 40% -25 0 25 50 75 1 00 125 0 0,1 0,2 0,3 0,4 time (us) % v ce i c t f i c 10% i c 90% -50 0 50 100 1 50 200 250 300 3,05 3,1 3,15 3,2 3,25 time(us) % t r v ce i c copyright vincotech 20 re v ision: 6
10-fz12NMA040SH-M267F/ 10-pz12NMA040SH-M267Fy datasheet figure 5 neutral point igbt figure 6 neutral point igbt turn-off switching waveforms & definition of t eoff turn-on switching waveforms & definition of t eon p off (100%) = 9,70 kw p on (100%) = 9,70 kw e off (100%) = 0,98 mj e on (100%) = 0,66 mj t eoff = 0,39 s t e on = 0,26 s fi gure 7 neutr al point igbt figure 8 neutral point fwd gate voltage vs gate charge (measured) turn-off switching waveforms & definition of t rr v geoff = -15 v v d (100%) = 350 v v g eon = 15 v i d ( 100%) = 28 a v c ( 100%) = 350 v i r rm (100%) = -44 a i c (100%) = 28 a t rr = 0,11 s q g = 277, 42 nc switching definitions neutral point igbt i c 1% v ge 90% -25 0 25 50 7 5 1 00 125 -0,2 0 0,2 0,4 0,6 time (us) % p off e off t eoff v ce 3% v ge 10% -50 0 50 100 1 50 200 2,9 3 3,1 3,2 3,3 time(us) % p on e on t eon -20 -15 -10 -5 0 5 10 15 20 -50 0 50 100 150 200 250 300 qg (nc) v ge (v) i rrm 10% i rrm 90% i rrm 100% t rr -200 -150 - 100 -50 0 50 100 150 3 3,05 3,1 3,15 3,2 3,25 3,3 time(us) % i d v d fitted copyright vincotech 21 re v ision: 6
10-fz12NMA040SH-M267F/ 10-pz12NMA040SH-M267Fy datasheet figure 9 neutral point igbt figure 10 neutral point fwd turn-on switching waveforms & definition of t qrr turn-on switching waveforms & definition of t erec (t qrr = integrating time for q rr ) (t erec = integrating time for e rec ) i d (100%) = 28 a p r e c (100%) = 9,70 kw q rr (100%) = 2,73 c e r ec (100%) = 0,71 mj t qrr = 1,00 s t e rec = 1,00 s fi gure 11 boost stage switching measurement circuit measurement circuits swit ching definitions neutral point igbt t qrr -200 -15 0 - 100 -50 0 50 100 150 3 3,2 3,4 3,6 3,8 4 4,2 time(us) % i d q rr -25 0 25 50 75 100 125 3 3,2 3,4 3,6 3,8 4 4,2 time(us) % p rec e rec t erec copyright vincotech 22 revision: 6
10-fz12NMA040SH-M267F/ 10-pz12NMA040SH-M267Fy datasheet t j 125 c r gon 8 r goff 8 figure 1 half bridge igbt figure 2 half bridge igbt turn-off switching waveforms & definition of t doff , t eoff turn-on switching waveforms & definition of t don , t eon (t eoff = integrating time for e off ) (t eon = integrating time for e on ) v ge (0%) = -15 v v g e (0%) = -15 v v g e (100%) = 15 v v ge (100%) = 15 v v c ( 100%) = 700 v v c (100%) = 700 v i c (100%) = 28 a i c ( 100%) = 28 a t do ff = 0,22 s t d on = 0,07 s t e off = 0,61 s t e on = 0,16 s fi gure 3 half bridge igbt figure 4 half bridge igbt turn-off switching waveforms & definition of t f turn-on switching waveforms & definition of t r v c (100%) = 700 v v c (100%) = 700 v i c (100%) = 28 a i c ( 100%) = 28 a t f = 0 ,08 s t r = 0,02 s s witching definitions half bridge igbt general conditions = = = i c 1% v ce 90% v ge 90% -25 0 25 50 75 1 00 125 -0,2 0 0,2 0,4 0,6 0,8 time (us) % t doff t eoff v ce i c v ge i c 10% v ge 10% t don v ce 3% -50 0 50 100 1 50 200 250 2,9 3 3,1 3,2 3,3 time(us) % i c v ce t eon v ge fitted i c10% i c 90% i c 60% i c 40% -25 0 25 50 75 1 00 125 0 0,1 0,2 0,3 0,4 time (us) % v ce i c t f i c 10% i c 90% -50 0 50 100 1 50 200 250 3,05 3,07 3,09 3,11 3,13 3,15 time(us) % t r v ce i c copyright vincotech 23 re v ision: 6
10-fz12NMA040SH-M267F/ 10-pz12NMA040SH-M267Fy datasheet figure 5 half bridge igbt figure 6 half bridge igbt turn-off switching waveforms & definition of t eoff turn-on switching waveforms & definition of t eon p off (100%) = 19,5 0 kw p on (100%) = 19,5 0 kw e off (100%) = 1,16 mj e on (100%) = 0,52 mj t eoff = 0,61 s t e on = 0,16 s fi gure 7 half bridge igbt figure 8 half bridge fwd gate voltage vs gate charge (measured) turn-off switching waveforms & definition of t rr v geoff = -15 v v d (100%) = 700 v v g eon = 15 v i d ( 100%) = 28 a v c ( 100%) = 700 v i r rm (100%) = -41 a i c (100%) = 28 a t rr = 0,04 s q g = 299, 41 nc switching definitions half bridge igbt i c 1% v ge 90% -25 0 25 50 7 5 1 00 125 -0,2 0 0,2 0,4 0,6 0,8 time (us) % p off e off t eoff v ce 3% v ge 10% -50 0 50 100 1 50 200 2,9 3 3,1 3,2 3,3 time(us) % p on e on t eon -20 -15 -10 -5 0 5 10 15 20 -50 0 50 100 150 200 250 300 qg (nc) v ge (v) i rrm 10% i rrm 90% i rrm 100% t rr -150 -100 - 50 0 50 100 150 3,07 3,09 3,11 3,13 3,15 3,17 time(us) % i d v d fitted copyright vincotech 24 re v ision: 6
10-fz12NMA040SH-M267F/ 10-pz12NMA040SH-M267Fy datasheet figure 9 half bridge igbt figure 10 half bridge fwd turn-on switching waveforms & definition of t qrr turn-on switching waveforms & definition of t erec (t qrr = integrating time for q rr ) (t erec = integrating time for e rec ) i d (100%) = 28 a p r e c (100%) = 19,5 0 kw q rr (100%) = 0,92 c e r ec (100%) = 0,12 mj t qrr = 0,08 s t e rec = 0,08 s fi gure 11 buck stage switching measurement circuit measurement circuits swit ching definitions half bridge igbt t qrr -150 -10 0 - 50 0 50 100 150 3 3,05 3,1 3,15 3,2 3,25 time(us) % i d q rr -25 0 25 50 75 100 125 3,05 3,1 3,15 3,2 3,25 time(us) % p rec e rec t erec copyright vincotech 25 revision: 6
10-fz12NMA040SH-M267F/ 10-pz12NMA040SH-M267Fy datasheet version ordering code in datamatrix as in packaging barcode as w/o thermal paste 12mm housing solder pin 10-fz12NMA040SH-M267F m267f m267f w/o thermal paste 12mm housing press-fit pin 10-pz12NMA040SH-M267Fy m267fy m267fy outline pinout ordering code & marking ordering code and marking - outline - pinout copyright vincotech 26 revision: 6
10-fz12NMA040SH-M267F/ 10-pz12NMA040SH-M267Fy datasheet disclaimer life support policy as used herein: 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. the information given in this datasheet describes the type of component and does not represent assured characteristics. for tested values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. copyright vincotech 27 revision: 6

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